Renesas Electronics 2SA844
Silicon PNP Epitaxial Transistor
ABSOLUTE MAXIMUM RATINGS
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature 3 2 1 Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings –55 –55 –5 –100 100 300 150 –55 to +150 (Ta = 25°C) Unit V V V mA mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 4 2SA844ELECTRICAL CHARACTERISTICS
Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICBO Emitter cutoff current DC current transfer ratio IEBO hFE*1 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Gain ba