Hitachi 2SA893
The 2SA893/A is grouped by h FE as follows.2SA893 Specifications
- Max Collector Current : 50mA
- Terminals : 3
- Collector Emitter Voltage : 90V
- Max Power Dissipation : 300mW
- Max Operating Temp : 125°C
Source:
Octopart
| Part No. | 2SA893 |
|---|---|
| Datasheet | 2SA893 Download |
| Manufacturer |  Hitachi |
| Description | Silicon PNP Epitaxial Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SA893 –90 –90 –5 –50 300 150 –55 to +150 2SA893A –120 –120 –5 –50 300 150 –55 to +150 Unit V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) 2SA893 Item Collector to emitter breakdown voltage Collector cutoff current Symbol V(BR)CEO I CBO 1 2SA893A Max — –0.5 — 800 Min Typ Max — — –0.5 800 –0.75 V –0.5 — — 10 V MHz pF dB Unit V µA µA Test conditions I C = –1 mA, RBE = ∞ VCB = –75 V, IE = 0 VCB = –100 V, IE = 0 VCE = –12 V, I C = –2 mA VCE = –12 V, I C = –2 mA I C = –10 mA, I B = –1 mA VCE = –12 V, I C = –2 mA VCB = –25 V, IE = 0, f = 1 MHz VCE = –6 V, I C = –50 µA Rg = 50 kΩ, f = 1 kHz Min –90 — — Typ — — — — — — 120 1.8 2 –120 — — — 250 — — — — — 120 1.8 2 DC current transfer ratio hFE* Base to emitter voltage VBE Collector to emitter sa...
