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2SA893A Datasheet PDF

Hitachi 2SA893A

The 2SA893/A is grouped by h FE as follows.
Part No. 2SA893A
Datasheet 2SA893A Download
Manufacturer
Hitachi
Description Silicon PNP Epitaxial Transistor
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2SA893A datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SA893 –90 –90 –5 –50 300 150 –55 to +150 2SA893A –120 –120 –5 –50 300 150 –55 to +150 Unit V V V mA mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) 2SA893 Item Collector to emitter breakdown voltage Collector cutoff current Symbol V(BR)CEO I CBO 1 2SA893A Max — –0.5 — 800 Min Typ Max — — –0.5 800 –0.75 V –0.5 — — 10 V MHz pF dB Unit V µA µA Test conditions I C = –1 mA, RBE = ∞ VCB = –75 V, IE = 0 VCB = –100 V, IE = 0 VCE = –12 V, I C = –2 mA VCE = –12 V, I C = –2 mA I C = –10 mA, I B = –1 mA VCE = –12 V, I C = –2 mA VCB = –25 V, IE = 0, f = 1 MHz VCE = –6 V, I C = –50 µA Rg = 50 kΩ, f = 1 kHz Min –90 — — Typ — — — — — — 120 1.8 2 –120 — — — 250 — — — — — 120 1.8 2 DC current transfer ratio hFE* Base to emitter voltage VBE Collector to emitter sa...
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