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2SA893A Datasheet PDF

Renesas Electronics 2SA893A

The 2SA893A is grouped by hFE as follows.
Part No. 2SA893A
Datasheet 2SA893A Download
Manufacturer
Renesas Electronics
Description Silicon PNP Transistor
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2SA893A datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 3 2 1 Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –120 –120 –5 –50 300 150 –55 to +150 (Ta = 25°C) Unit V V V mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 4 2SA893A

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown voltage Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance V(BR)CEO ICBO hFE*1 VBE VCE(sat) fT Cob –120 — — 250 — — — — — — — — — –0.5 — 800 — –0.75 — –0.5 120 — 1.8 — V µA µA V V MHz pF IC = –1 mA, RBE = ∞ VCB = –75 V, IE = 0 VCB = –100 V, IE = 0 VCE = –12 V, IC = –2 mA VCE = –12 V, IC = –2 mA IC = –10 mA, IB = –1 mA VCE = –12 V, IC = –2 mA VCB = –25 V, IE = 0, f = 1 MHz Noise figure NF — 2 10 dB VCE = –6 V, IC = –50 µA Rg = 50 kΩ, f = 1 kHz Note: 1.
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