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2SB1025 Datasheet PDF

Hitachi 2SB1025

The 2SB1025 is grouped by hFE1 as follows.
Part No. 2SB1025
Datasheet 2SB1025 Download
Manufacturer
Hitachi
Description Silicon PNP Transistor
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2SB1025 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)* PC * Tj Tstg 2 1 Ratings –120 –80 –5 –1 –2 1 150 –55 to +150 Unit V V V A A W °C °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Note: Mark hFE1 VCE(sat) VBE fT Cob 1 Min –120 –80 –5 — 60 30 — — — — Typ — — — — — — — — 140 20 Max — — — –10 320 — –1 –0.9 — — Unit V V V µA Test conditions I C = –10 µA, IE = 0 I...
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