Renesas Electronics 2SB1025
Silicon PNP Epitaxial Transistor
| Part No. | 2SB1025 |
|---|---|
| Datasheet | 2SB1025 Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon PNP Epitaxial Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Item Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current Collector peak current Collector power dissipation IC iC(peak)*1 PC*2 Junction temperature Tj Storage temperature Tstg Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) Ratings –120 –80 –5 –1 –2 1 150 –55 to +150 (Ta = 25°C) Unit V V V A A W °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SB1025ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –120 — — V IC = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –80 — — V IC = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 — — V IE = –10 µA, IC = 0 Collector cutoff current ICBO — — –10 µA VCB = –100 V, IE = 0 DC current transfer ratio hFE1 100 — 200 VCE = –5 V, IC = –150 mA hFE2 30 — — VCE = –5 V, IC = –500 mA (Pulse test) Collector to emitter satu...
