Hitachi 2SB1103
PNP Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg ID* 1 1 Ratings –60 –60 –7 –8 –12 40 150 –55 to +150 8 Unit V V V A A W °C °C AELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min –60 –7 — — 1000 — — — — — — — — Typ — — — — — — — — — — 0.5 3.0 1.0 Max — — –100 –10 20000 –1.5 –3.0 –2.0 –3.5 3.0 — — — V µs V V Unit V V µA µA Test conditions I C = –25 mA, RBE = ∞ I E = –50 mA, IC = 0 VCB = –60 V, IE = 0 VCE = –50 V, RBE = ∞ VCE = –3 V, IC = –4 A*1 I C = –4 A, IB = –8 mA*1 I C = –8 A, IB = –80 mA*1 I C = –4 A, IB = –8 mA*1 I C = –8 A, IB = –80 mA*1 I D = 8 A*1 I C = –4 A, I B1 = –IB2 = –8 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(B...