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2SB1390 Datasheet PDF

Hitachi 2SB1390

Silicon PNP Transistor

Part No. 2SB1390
Datasheet 2SB1390 Download
Manufacturer
Hitachi
Description Silicon PNP Transistor
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2SB1390 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Tj Tstg ID* 1 1 Ratings –60 –60 –7 –8 –12 2 25 150 –55 to +150 8 Unit V V V A A W °C °C A

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –60 –60 –7 — — 1000 — — — — — Typ — — — — — — — — — — — Max — — — –10 –10 20000 –1.5 –3.0 –2.0 –3.5 3.0 V V V Unit V V V µA Test conditions I C = –0.1 mA, IE = 0 I C = –25 mA, RBE = ∞ I E = –50 mA, IC = 0 VCB = –50 V, IE = 0 VCE = –50 V, RBE = ∞ VCE = –3 V, IC = –4 A*1 I C = –4 A, IB = –8 mA*1 I C = –8 A, IB = –80 mA*1 I C = –4 A, IB = –8 mA*1 I C = –8 A, IB = –80 mA*1 I D = 8 A*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cu...
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