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2SB562 Datasheet PDF

Hitachi 2SB562

The 2SB562 is grouped by hFE as follows.
Part No. 2SB562
Datasheet 2SB562 Download
Manufacturer
Hitachi
Description Silicon PNP Transistor
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2SB562 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings –25 –20 –5 –1.0 –1.5 0.9 150 –55 to +150 Unit V V V A A W °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Note: B 85 to 170 Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO hFE* 1 Min –25 –20 –5 — 85 — — — — Typ — — — — — –0.2 –0.8 350 38 Max — — — –1.0 240 –0.5 –1.0 — — Unit V V V µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –20 V, IE = 0 VCE = –2 V, I C = –0.5 A (Pulse test) VCE(sat) VBE fT Cob V V...
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