Unisonic Technologies 2SB562
PNP EPITAXIAL SILICON TRANSISTOR
| Part No. | 2SB562 |
|---|---|
| Datasheet | 2SB562 Download |
| Manufacturer |  Unisonic Technologies |
| Description | PNP EPITAXIAL SILICON TRANSISTOR |
| Buy | Stock & Price |
FEATURES
* Low frequency power amplifier * Complement to 2SD468 1 TO-92 1 TO-92NL● ORDERING INFORMATION Order Number Lead Free Halogen Free 2SB562L-x-T92-B 2SB562G-x-T92-B 2SB562L-x-T92-K 2SB562G-x-T92-K 2SB562L-x-T9N-B 2SB562G-x-T9N-B 2SB562L-x-T9N-K 2SB562G-x-T9N-K Note: Pin Assignment: E: Emitter C: Collector B: Base Package TO-92 TO-92 TO-92NL TO-92NL Pin Assignment 123 ECB ECB ECB ECB Packing Tape Box Bulk Tape Box Bulk
● MARKING TO-92 TO-92NL Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 4 QW-R211-004.C 2SB562 PNP EPITAXIAL SILICON TRANSISTOR
● ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -25 V Collector-Emitter Voltage Emitter-Base Voltage VCEO VEBO -20 -5 V V Collector Current Ic -1 A Collector Peak Current IC (peak) -1.5 A Collector Power Dissipation Junction Temperature PC 0.9 W TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
