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2SC1906 Datasheet PDF

Hitachi 2SC1906

Silicon NPN Transistor

Part No. 2SC1906
Datasheet 2SC1906 Download
Manufacturer
Hitachi
Description Silicon NPN Transistor
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2SC1906 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 30 19 2 50 –50 300 150 –55 to +150 Unit V V V mA mA mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 19 2 — 40 600 — — — — — Typ — — — — — 1000 1.0 0.2 10 33 18 Max — — — 0.5 — — 2.0 1.0 25 — — MHz pF V ps dB dB Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 3 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz I C = 20 mA, IB = 4 mA VCB = 10 V, IC = 10 mA, f = 31.8 MHz VCE = 10 V, I C = 5 mA VCE = 10 V, I C = 5 mA f = 45 MHz f = 200 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Gain ba...
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