Hitachi 2SC1906
Silicon NPN Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 30 19 2 50 –50 300 150 –55 to +150 Unit V V V mA mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 19 2 — 40 600 — — — — — Typ — — — — — 1000 1.0 0.2 10 33 18 Max — — — 0.5 — — 2.0 1.0 25 — — MHz pF V ps dB dB Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 3 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz I C = 20 mA, IB = 4 mA VCB = 10 V, IC = 10 mA, f = 31.8 MHz VCE = 10 V, I C = 5 mA VCE = 10 V, I C = 5 mA f = 45 MHz f = 200 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Gain ba...