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2SC1921 Datasheet PDF

Hitachi 2SC1921

Silicon NPN Transistor

Part No. 2SC1921
Datasheet 2SC1921 Download
Manufacturer
Hitachi
Description Silicon NPN Transistor
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2SC1921 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 250 200 5 50 600 150 –55 to +150 Unit V V V mA mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 250 200 5 — 30 — 60 — Typ — — — — — — 130 3 Max — — — 1.0 300 1.0 — 4 V MHz pF Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCE = 120 V, RBE = ∞ VCE = 6 V, IC = 10 mA I C = 10 mA, IB = 1 mA VCE = 6 V, IC = 10 mA VCB = 6 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CEO hFE VCE(sat) fT Cob 2 2SC1921 Maximum Collector Dissipation Curve...
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