Renesas Electronics 2SC1921
Silicon NPN Triple Diffused Type Transistor
| Part No. | 2SC1921 |
|---|---|
| Datasheet | 2SC1921 Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon NPN Triple Diffused Type Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 3 2 1 Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 250 200 5 50 600 150 –55 to +150 (Ta = 25°C) Unit V V V mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SC1921ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 250 — — V IC = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 200 — — V IC = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 —— V IE = 10 µA, IC = 0 Collector cutoff current ICEO — — 1.0 µA VCE = 120 V, RBE = ∞ DC current transfer ratio hFE 30 — 300 VCE = 6 V, IC = 10 mA Collector to emitter saturation voltage VCE(sat) — — 1.0 V IC = 10 mA, IB = 1 mA Gain bandwidth product fT 60 130 — MHz VCE = 6 V, IC = 10 mA Collector output capacitance Cob — 3 4 pF VCB = 6 V, IE = 0, f = 1 MHz Rev.
