Hitachi 2SC2610
Silicon NPN Triple Diffused Transistor
| Part No. | 2SC2610 |
|---|---|
| Datasheet | 2SC2610 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Triple Diffused Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 300 300 5 100 800 150 –55 to +150 Unit V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 300 300 5 — 30 — 50 — Typ — — — — — — 80 — Max — — — 1.0 200 1.5 — 4.0 V MHz pF Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCE = 250 V, RBE = ∞ VCE = 20 V, IC = 20 mA I C = 20 mA, IB = 2 mA VCE = 20 V, IC = 20 mA VCB = 20 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CEO hFE VCE(sat) fT Cob 2 2SC2610 Maximum Collector Dissipation C...
