Renesas Electronics 2SC2610
Silicon NPN Triple Diffused Transistor
| Part No. | 2SC2610 |
|---|---|
| Datasheet | 2SC2610 Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon NPN Triple Diffused Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 300 300 5 100 800 150 –55 to +150 Unit V V V mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 Free Datasheet 2SC2610ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEO hFE VCE(sat) fT Cob Min 300 300 5 — 30 — 50 — Typ — — — — — — 80 — Max — — — 1.0 200 1.5 — 4.0 Unit V V V µA V MHz pF Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCE = 250 V, RBE = ∞ VCE = 20 V, IC = 20 mA IC = 20 mA, IB = 2 mA VCE = 20 V, IC = 20 mA VCB = 20 V, IE = 0,...
