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2SC2613 Datasheet PDF

Hitachi 2SC2613

Silicon NPN Transistor

Part No. 2SC2613
Datasheet 2SC2613 Download
Manufacturer
Hitachi
Description Silicon NPN Transistor
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2SC2613 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) IB PC * Tj Tstg 1 Ratings 500 400 7 5 10 2.5 40 150 –55 to +150 Unit V V V A A A W °C °C 2SC2613

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to emitter sustain voltage Symbol VCEO(sus) VCEX(sus) Min 400 400 Typ — — Max — — Unit V V Test conditions I C = 0.2 A, RBE = ∞, L = 100 mH I C = 5 A, IB1 = –IB2 = 1 A VBE = –5 V, L = 180 µH, Clamped I E = 10 mA, IC = 0 VCB = 400 V, IE = 0 VCE = 350 V, RBE = ∞ VCE = 5 V, IC = 2.5 A*1 VCE = 5 V, IC = 5 A*1 V V µs µs µs I C = 2.5 A, IB = 0.5 A*1 I C = 2.5 A, IB = 0.5 A*1 I C = 5 A, IB1 = –IB2 = 1 A, VCC ≅ 150 V Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO 7 — — 15 7 — — — — — — — — — — — — — 1.2 — — 100...
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