Datasheet Details
| Part number | 2SC2613 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.66 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2613-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC2613 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.66 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2613-INCHANGE.pdf |
|
|
|
·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed and high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.5 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2613 isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2613 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SC2613 | Silicon NPN Transistor | Hitachi Semiconductor |
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2SC2613 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC2611 | NPN Transistor |
| 2SC2612 | NPN Transistor |
| 2SC2615 | NPN Transistor |
| 2SC2616 | NPN Transistor |
| 2SC2608 | NPN Transistor |
| 2SC2626 | NPN Transistor |
| 2SC2650 | Silicon NPN Power Transistor |
| 2SC2654 | NPN Transistor |
| 2SC2655 | NPN Transistor |
| 2SC2656 | NPN Transistor |