Datasheet Details
| Part number | 2SC2615 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.46 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2615-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2615.
| Part number | 2SC2615 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.46 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2615-INCHANGE.pdf |
|
|
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·Low Collector Saturation Voltage ·High Collector-Emitter Breakdown Voltage ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage ,high speed and high power Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Pulse 16 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2615 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2615 | Silicon NPN Power Transistors | SavantIC |
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