Datasheet Details
| Part number | 2SC2612 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.98 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2612-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC2612 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.98 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2612-INCHANGE.pdf |
|
|
|
·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed and high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2612 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC2612 MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2612 | Silicon NPN Transistor | Hitachi Semiconductor |
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2SC2612 | SILICON POWER TRANSISTOR | SavantIC |
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| 2SC2650 | Silicon NPN Power Transistor |
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