Datasheet4U Logo Datasheet4U.com

2SC2612 - NPN Transistor

General Description

High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) Good Linearity of hFE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed and high power switching appli

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC2612 Silicon NPN Transistor Hitachi Semiconductor
2SC2612 SILICON POWER TRANSISTOR SavantIC
2SC2610 Silicon NPN Triple Diffused Transistor Hitachi Semiconductor
2SC2610 Silicon NPN Triple Diffused Transistor Renesas
2SC2611 Silicon NPN Transistor Hitachi Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC2611 NPN Transistor
2SC2613 NPN Transistor
2SC2615 NPN Transistor
2SC2616 NPN Transistor
2SC2608 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2612 isc website：www.iscsemi.