Datasheet4U Logo Datasheet4U.com

2SC2618 - Silicon NPN Epitaxial Transistor

Key Features

  • Low frequency amplifier. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 35 35 4 500 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base break.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC2618 Silicon NPN Transistor Hitachi Semiconductor
2SC2618 Silicon NPN Epitaxial Transistor Renesas
2SC2610 Silicon NPN Triple Diffused Transistor Hitachi Semiconductor
2SC2610 Silicon NPN Triple Diffused Transistor Renesas
2SC2611 NPN Transistor INCHANGE

Other Datasheets by Kexin Semiconductor

Part Number Description
2SC2619 Silicon NPN Epitaxial Type Transistor
2SC2223 NPN Silicon Epitaxial Transistor
2SC2295 Silicon NPN Transistor
2SC2404 Silicon PNP Transistor
2SC2405 Silicon PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Silicon NPN Epitaxial 2SC2618 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features Low frequency amplifier. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.