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2SC2618 Datasheet PDF

Hitachi 2SC2618

The 2SC2618 is grouped by h FE1 as follows.
Part No. 2SC2618
Datasheet 2SC2618 Download
Manufacturer
Hitachi
Description Silicon NPN Transistor
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2SC2618 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 35 35 4 500 150 150 –55 to +150 Unit V V V mA mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 35 35 4 — 1 Typ — — — — — — 0.2 0.64 Max — — — 0.5 320 — 0.6 — Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IC = 0 VCE = 3 V, IC = 10 mA (Pulse test) VCE = 3 V, IC = 500 mA (Pulse test) Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage Note: Grade Mark hFE1 VCE(sat) VBE 60 10 — — V V I C = 150 mA, IB = 15 mA (Pulse test) VCE = 3 V, IC = 10 mA (Pulse test) 1. The 2SC2618 is grouped by h FE1 as follows.
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