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2SC2618 Datasheet PDF

Renesas Electronics 2SC2618

The 2SC2618 is grouped by hFE1 as follows.
Part No. 2SC2618
Datasheet 2SC2618 Download
Manufacturer
Renesas Electronics
Description Silicon NPN Epitaxial Transistor
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2SC2618 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 35 35 4 500 150 150 –55 to +150 (Ta = 25°C) Unit V V V mA mW °C °C R07DS0273EJ0400 Rev.4.00 Jan 10, 2014 Page 1 of 5 2SC2618 Preliminary

ELECTRICAL CHARACTERISTICS

Item Symbol Min Collector to base breakdown voltage V(BR)CBO 35 Collector to emitter breakdown voltage V(BR)CEO 35 Emitter to base breakdown voltage V(BR)EBO 4 Collector cutoff current DC current transfer ratio ICBO hFE1*1 — 100 hFE2 10 Collector to emitter saturation voltage VCE(sat) — Base to emitter voltage VBE — Note: 1. The 2SC2618 is grouped by hFE1 as follows. Grade C D Mark RC RD hFE1 100 to 200 160 to 320 Typ — — — — — — 0.2 0.64 Max — — — 0.5 320 — 0.6 — Unit V V V μA V V (Ta = 25°C) Test conditions IC = 10 μA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 μA, IC = 0 VCB = 20 V, IC = 0 VCE =...
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