SavantIC 2SC2612
SILICON POWER TRANSISTOR
DESCRIPTION
●With TO-220 package●High collector breakdown voltage : VCEO=400V(Min)
APPLICATIONS
●For high voltage ,high speed and high power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base EmitterDESCRIPTION
Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 3 6 1.5 30 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIO...