Hitachi 2SC2735
Silicon NPN Transistor
| Part No. | 2SC2735 |
|---|---|
| Datasheet | 2SC2735 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 3 50 150 150 –55 to +150 Unit V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 20 3 — — 40 — 600 — — — Typ — — — — — — 0.85 1200 210 130 21 Max — — — 0.5 1.0 — 1.5 — — — — pF MHz mV mV dB Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IC = 0 I C = 20 mA, IB = 4 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 10 mA VCC = 12 V, IC = 7 mA, f OSC = 300 MHz VCC = 12 V, IC = 7 mA, f OSC = 930 MHz VCC = 12 V, IC = 2 mA, f = 200 MHz, f OSC = 230 MHz (0dBm) VCC = 12 V, IC = 2 mA, f = 200 MHz, f OSC = 230 MHz (0dBm) Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown vo...
