Renesas Electronics 2SC2735
Silicon NPN Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 3 50 150 150 –55 to +150 Unit V V V mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 7 Free Datasheet 2SC2735ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Gain bandwidth product Oscillating output voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO VCE(sat) hFE Cob fT VOSC1 VOSC2 Conversion gain CG Min 30 20 3 — — 40 — 600 — — — Typ — — — — — — 0.85 1200 210 130 21 Max — — — 0.5 1.0 — 1.5 — — — — Unit V V V µA V pF MHz mV mV dB Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 10 V, IC = 0...