Hitachi 2SC2736
Silicon NPN Transistor
| Part No. | 2SC2736 |
|---|---|
| Datasheet | 2SC2736 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 3 50 150 150 –55 to +150 Unit V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 20 3 — — 30 — 1400 — Typ — — — — — — — 2200 22.5 Max — — — 500 0.7 200 1.0 — — pF MHz dB Unit V V V nA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 15 V, IC = 0 I C = 10 mA, IB = 5 mA VCE = 10 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 5 mA VCC = 12 V, IC = 2 mA, f = 200 MHz, f OSC = 230 MHz (0dBm) VCC = 12 V, IC = 2 mA, f = 900 MHz, f OSC = 930 MHz (0dBm), f Out = 30 MHz VCC = 12 V, IC = 2 mA, f = 200 MHz, f OSC = 230 MHz (0dBm) VCC = 12 V, IC = 7 mA, f OSC = 300 MHz VCC = 12 V, IC = 7 mA, f OSC = 930 MHz Collector to emitter br...
