Inchange Semiconductor 2SC2736
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2736 |
|---|---|
| Datasheet | 2SC2736 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN RF Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Silicon NPN epitaxial type●Local oscillator wide band amplifier
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in UHF/VHF frequency convertersABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Transistor INCHANGE Semiconductor 2SC2736ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA ; IB= 5mA ICBO Collector Cutoff Current VCB= 15V; IE= 0 0.7 V 0.5 μA hFE DC Current Gain IC= 5mA ; VCE= 10V 30 200 fT Current-Gain—Bandwidth Product IC= 5mA ; VCE=...