Hitachi 2SC3380
Silicon NPN Triple Diffused Transistor
| Part No. | 2SC3380 |
|---|---|
| Datasheet | 2SC3380 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Triple Diffused Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Symbol VCBO VCEO VEBO IC PC * Tj Tstg 1 Ratings 300 300 5 100 1 150 –55 to +150 Unit V V V mA W °C °C 1. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product Collector output capacitance Note: Marking is “AS”. Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CEO VCE(sat) hFE fT Cob Min 300 300 5 — — 30 — — Typ — — — — — — 80 — Max — — — 1 1.5 200 — 4 MHz pF Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCE = 250 V, RBE = ∞ I C = 20 mA, IB = 2 mA VCE = 20 V, IC = 20 mA VCE = 20 V...
