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2SC3390 Datasheet PDF

Hitachi 2SC3390

The 2SC3390 is grouped by h FE as follows.
Part No. 2SC3390
Datasheet 2SC3390 Download
Manufacturer
Hitachi
Description Silicon NPN Epitaxial Transistor
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2SC3390 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 55 50 5 100 300 150 –55 to +150 Unit V V V mA mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Noise figure Note: B 100 to 200 Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* VBE VCE(sat) fT Cob NF 1 Min 55 50 5 — — 100 — — — — — Typ — — — — — — — — 200 — 1.0 Max — — — 0.5 0.5 320 0.75 0.2 — 3.5 5.0 Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V,...
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