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2SC3391 Datasheet PDF

Hitachi 2SC3391

The 2SC3391 is grouped by h FE as follows.
Part No. 2SC3391
Datasheet 2SC3391 Download
Manufacturer
Hitachi
Description Silicon NPN Epitaxial Planar Transistor
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2SC3391 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 4 20 200 150 –55 to +150 Unit V V V mA mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Power gain Noise figure Note: B 60 to 120 Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO hFE* VBE VCE(sat) fT Cob PG NF 1 Min 30 20 4 — 60 — — 450 — 17 — Typ — — — — — 0.72 0.17 940 0.9 20 3.5 Max — — — 0.5 200 — — — 1.2 — 5.5 Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 6 V, IC = 1 mA V V MHz pF dB dB VCE = 6...
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