Hitachi 2SC4265
Silicon NPN Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 3 50 100 150 –55 to +150 Unit V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Gain bandwidth product Note: Marking is “JC”. Symbol V(BR)CBO V(BR)CEO I CBO I EBO VCE(sat) hFE Cob fT Min 30 20 — — — 40 — 600 Typ — — — — — — — — Max — — 0.5 10 1.0 — 1.5 — pF MHz Unit V V µA µA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ VCE = 15 V, IE = 0 VEB = 3 V, IC = 0 I C = 20 mA, IB = 4 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 10 mA See characteristic curves of 2SC2735. 2 2...