Hitachi 2SC4462
Silicon NPN Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 25 4 20 100 150 –55 to +150 Unit V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product Collector output capacitance Conversion gain Noise figure Note: Marking is “EC”. Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO VCE(sat) hFE fT Cob CG NF Min 30 25 4 — — 30 700 — — — Typ — — — — — — 1000 — 7.0 10.0 Max — — — 0.5 5 — — 0.8 — — MHz pF dB dB Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IE = 0 I C = 10 mA, IB = 1 mA VCE = 10 V, IC = 3 mA VCE = 10 V, IC = 5 mA...