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2SC4463 Datasheet PDF

Hitachi 2SC4463

Silicon NPN Transistor

Part No. 2SC4463
Datasheet 2SC4463 Download
Manufacturer
Hitachi
Description Silicon NPN Transistor
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2SC4463 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 3 50 100 150 –55 to +150 Unit V V V mA mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product Reverse transfer capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO VCE(sat) hFE fT Cre Min 30 20 3 — — 60 600 — Typ — — — — — 120 1000 0.35 Max — — — 0.5 1.0 — — 0.65 MHz pF Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IE = 0 I C = 20 mA, IB = 4 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, emitter common, f = 1 MHz VCC = 12 V, IC = 2 mA, f = 200 MHz f OSC = 230 Mhz (0 dBm), f out = 30 MHz Conversion gain Noise figure Note: Marking is “HC”.
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