Hitachi 2SC4747
NPN TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC IC(surge) PC* Tj Tstg 1 Ratings 1500 800 6 10 20 50 150 –55 to +150 Unit V V V A A W °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min 800 6 — — — — — Typ — — — — — — — Max — — 500 30 5 1.5 0.3 V V µs Unit V V µA Test conditions IC = 10 mA, RBE = _ IE = 10 mA, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A IC = 8 A, IB = 1.6 A IC = 8 A, IB = 1.6 A ICP = 7 A, IB1 = 1.4 A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Fall time V(BR)EBO ICES hFE VCE(sat) VBE(sat) tf 2 2SC4747 Maximum Collector Dissipation Curve 60 Collector power dissip...