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2SC4789 - Silicon NPN Transistor

Key Features

  • High speed switching time: 0.5 µs max.
  • High breakdown voltage, high current: VCBO = 1500 V, IC = 25 A.
  • Suitable for large size CRT Display 1 1. Base 2. Collector 3. Emitter 3 2 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC ic(surg.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SC4789 Silicon NPN Triple Diffused Application Character Display Horizontal Deflection Output TO–3PL Features • High speed switching time: 0.5 µs max • High breakdown voltage, high current: VCBO = 1500 V, IC = 25 A • Suitable for large size CRT Display 1 1. Base 2. Collector 3. Emitter 3 2 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C.