Datasheet Details
| Part number | 2SC4789 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.84 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4789-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor isc Product Specification 2SC4789.
| Part number | 2SC4789 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.84 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4789-INCHANGE.pdf |
|
|
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·Silicon NPN triple diffused ·High Switching Speed ·High Breakdown Voltage ·High speed switching time ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Character display horizontal deffection output ·Suitable for large size CRT display ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 25 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor isc Product Specification 2SC4789 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 16A;
IB=4A VBE(sat) Base-Emitter Saturation Voltage IC=16A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC4789 | Silicon NPN Transistor | Hitachi |
| Part Number | Description |
|---|---|
| 2SC4703 | NPN Transistor |
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| 2SC4743 | NPN Transistor |
| 2SC4744 | NPN Transistor |
| 2SC4745 | NPN Transistor |
| 2SC4746 | NPN Transistor |
| 2SC4747 | NPN Transistor |
| 2SC4761 | NPN Transistor |
| 2SC4762 | NPN Transistor |
| 2SC4763 | NPN Transistor |