Hitachi 2SC5023
Silicon NPN Epitaxial Type Transistor
FEATURES
● Excellent high frequency characteristics fT = 1000 MHz typ● High breakdown voltage and low output capacitance VCEO = 100 V, Cob = 4.5 pF typ
● Suitable for wide band video amplifier 1 2 3 1. Emitter 2. Collector 3. Base
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC ic(peak) PC PC*1 Tj Tstg Rating 100 100 5 0.2 0.5 1.25 8 150 –55 to +150 Unit V V V A A W W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— —————...