Hitachi 2SC5024
Silicon NPN Epitaxial Type Transistor
| Part No. | 2SC5024 |
|---|---|
| Datasheet | 2SC5024 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Epitaxial Type Transistor |
| Buy | Stock & Price |
FEATURES
● Excellent high frequency characteristics fT = 300 MHz typ● High breakdown voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ
● Suitable for wide band video amplifier
● Complimentary pair of 2SA1889 TO–126FM 123 1. Emitter 2. Collector 3. Base
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Symbol Rating Unit ——————————————————————————————————————————— Collector to base voltage VCBO 200 V ——————————————————————————————————————————— Collector to emitter voltage VCEO 200 V ——————————————————————————————————————————— Emitter to base voltage VEBO 4 V ——————————————————————————————————————————— Collector current IC 0.2 A ——————————————————————————————————————————— Collector peak current ic(peak) 0.5 A ——————————————————————————————————————————— Collector power dissipation PC 1.4 W ——————————————————————————————————————————— Collector power dissipation PC*1 8W ——————————————————————————————————————————— Junction temperature Tj 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— Note: 1.
