Hitachi 2SC5251
Silicon NPN Transistor
| Part No. | 2SC5251 |
|---|---|
| Datasheet | 2SC5251 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
FEATURES
● High breakdown voltage VCBO = 1500 V● High speed switching tf = 0.2 µsec (typ)
● Isolated package TO-3P●FM (N) Outline TO-3PFM (N) 1. Base 2. Collector 3. Emitter 1 2 3 2SC5251
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC IC(peak) PC* Tj Tstg 1 Ratings 1500 800 6 12 24 50 150 –55 to +150 Unit V V V A A W °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min 800 6 — 8 5 — — — Typ — — — — — — — 0.2 Max — — 500 35 9 5 1.5 0.4 V V µsec Unit V V µA Test conditions IC = 10 mA, RBE = ∞ IE = 10 mA, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 5 A IC = 7 A, IB = 1.8 A IC = 7 A, IB = 1.8 A ICP = 6 A, IB1 = 1.5 A, fH = 31.5 kHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutof...
