Hitachi 2SC5252
NPN TRANSISTOR
FEATURES
● High breakdown voltage VCBO = 1500 V● High speed switching tf ≤ 0.15 µsec(typ.)
● Isolated package TO–3P●FM Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 2SC5252
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. TC = 25°C Symbol VCBO VCEO VEBO IC IC(peak) PC* Tj Tstg 1 Ratings 1500 800 6 15 30 50 150 –55 to +150 Unit V V V A A W °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min 800 6 — 8 3 — — — Typ — — — — — — — 0.15 Max — — 500 35 6 5 1.5 0.3 V V µsec Unit V V µA Test conditions IC = 10 mA, RBE = ∞ IE = 10 mA, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 8 A IC = 10 A, IB = 3 A IC = 10 A, IB = 3 A ICP = 7 A, IB1 = 2 A, fH = 31.5 kHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC curren...