Inchange Semiconductor 2SC5252
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC5252 |
|---|---|
| Datasheet | 2SC5252 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High speed switching High breakdown voltage VCBO = 1500 V●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Character display horizontal deflection outputABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 15 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC5252 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC5252ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 3A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 3A 1.5 V ICBO Collector Cutoff Cur...