ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Ratings 100 80 5 4 8 40 150 –45 to +150 Unit V V V A A W °C °C 2SD1135 ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min 80 5 — 1 Typ — — — — — — — 10 40 Max — — 0.1 200 — 1.5 2 — — Unit V V mA Test conditions I C = 50 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 80 V, IE = 0 VCE = 5 V, IC = 1 A*2 VCE = 5 V, IC = 0.1 A*2 VCE = 5 V, IC = 1 A*2 I C = 2 A, IB = 0.2 A*2 VCE = 5 V, IC = 0.5 A*2 VCB = 20 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance VBE VCE(sat) fT Cob 60 35 — — — — V V MHz pF Notes: 1.
Hitachi
