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2SD1135 - NPN Transistor

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Description

Collector Current: IC= 4A Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@IC= 2A High Collector Power Dissipation Complement to Type 2SB859 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency

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Datasheet Details

Part number 2SD1135
Manufacturer INCHANGE
File Size 209.32 KB
Description NPN Transistor
Datasheet download datasheet 2SD1135 Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current: IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@IC= 2A ·High Collector Power Dissipation ·Complement to Type 2SB859 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 40 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ 2SD1135 isc website：www.iscsemi.
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