Datasheet Details
| Part number | 2SD1138 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.50 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1138-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1138 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.50 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1138-INCHANGE.pdf |
|
|
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min) ·Wide Area of Safe Operation ·plement to Type 2SB861 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 1.8 W 30 150 ℃ Tstg Storage Temperature Range -45~150 ℃ 2SD1138 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1138 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1138 | NPN TRANSISTOR | Hitachi Semiconductor |
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2SD1138 | SILICON POWER TRANSISTOR | SavantIC |
 |
2SD1138 | Silicon NPN Transistor | Renesas |
 |
2SD1138-B | NPN Transistor | MCC |
|
2SD1138-C | NPN Transistor | MCC |
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| 2SD111 | Silicon NPN Power Transistor |
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