Datasheet Details
| Part number | 2SD1136 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.06 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1136-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD1136.
| Part number | 2SD1136 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.06 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1136-INCHANGE.pdf |
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|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching and TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 5 A IC(surge) Collector Current-Surge Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 1.8 W 30 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SD1136 | SILICON POWER TRANSISTOR | SavantIC |
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2SD1136 | Silicon NPN Transistor | Hitachi |
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| 2SD111 | Silicon NPN Power Transistor |
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