2SD1137 datasheet by Inchange Semiconductor.
| Part number | 2SD1137 |
|---|---|
| Datasheet | 2SD1137-INCHANGE.pdf |
| File Size | 203.51 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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·High Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1137 | NPN TRANSISTOR | Hitachi Semiconductor |
 |
2SD1137 | SILICON POWER TRANSISTOR | SavantIC |
 |
2SD1137 | Silicon NPN Transistor | Renesas |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD113 | NPN Transistor |
| 2SD1133 | NPN Transistor |
| 2SD1134 | NPN Transistor |
| 2SD1135 | NPN Transistor |
| 2SD1136 | NPN Transistor |
| 2SD1138 | NPN Transistor |
| 2SD1139 | NPN Transistor |
| 2SD111 | Silicon NPN Power Transistor |
| 2SD1110 | NPN Transistor |
| 2SD1114 | NPN Transistor |
