Datasheet Details
| Part number | 2SD1137 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.51 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1137-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1137 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.51 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1137-INCHANGE.pdf |
|
|
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Wide Area of Safe Operation ·plement to Type 2SB860 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 1.8 W 40 150 ℃ Tstg Storage Temperature Range -45~150 ℃ 2SD1137 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1137 | NPN TRANSISTOR | Hitachi Semiconductor |
 |
2SD1137 | SILICON POWER TRANSISTOR | SavantIC |
 |
2SD1137 | Silicon NPN Transistor | Renesas |
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