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2SD1137 - NPN Transistor

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Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) Wide Area of Safe Operation Complement to Type 2SB860 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier TV vertical defle

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Datasheet Details

Part number 2SD1137
Manufacturer INCHANGE
File Size 203.51 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SB860 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 1.8 W 40 150 ℃ Tstg Storage Temperature Range -45~150 ℃ 2SD1137 isc website:www.
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