Inchange Semiconductor 2SD113
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD113 |
|---|---|
| Datasheet | 2SD113 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min)●High Power Dissipation
●High Current Capability
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Audio power amplifier, power switching applications.●DC-DC converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 30 A IE Emitter Current-Continuous 30 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 200 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SD113 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO CollectorVoltage Emitte Breakdown IC= 10mA; RBE= ∞ V(BR)EBO Emitte - Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sa...