| Part Number | 2SD1138 Datasheet |
|---|---|
| Manufacturer | SavantIC |
| Overview | ·With TO-220C package ·Complement to type 2SB861 APPLICATIONS ·Low frequency high voltage power amplifier TV vertical deflection output PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mou. Collector-emitter saturation voltage IC=0.5 A;IB=50m A VBE Base-emitter voltage IC=50mA ; VCE=4V ICBO Collector cut-off current VCB=120V; IE=0 hFE-1 DC current gain IC=50mA ; VCE=4V hFE-2 DC current gain IC=0.5A ; VCE=10V COB Output capacitance IE=0 ;VCB=100V,f=1MHz MIN TYP. MAX UNIT 1. |
2SD1138 Datasheet and Specifications PDF
The 2SD1138 is a SILICON POWER TRANSISTOR.
| Part Number | 2SD1138 Datasheet |
|---|---|
| Description | NPN TRANSISTOR |
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SD1138
Silicon NPN Triple Diffused
ADE-208-908 (Z) 1st. Edition Sep. 2000
Application
Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB861
Outline
T.
mitter voltage
VBE
* * Collector output capacitance Cob * 20 Note: 1. The 2SD1138 is grouped by hFE1 as follows. 2. Pulse test. Max Unit * V * V 1 µA 320 * 3.0 V 1.0 V * pF Test conditions IC = 50 mA, RBE = ∞ IE = 5 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 4 V, IC = 50 mA VCE = 10 V. |
| Part Number | 2SD1138 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SB861 ·Minimum Lot-to-Lot variations for robust device performance and reliable oper. X UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; RBE= ∞ 150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 0.05A 3.0 V VBE(on) Base-Emitter On Voltage IC= 50mA ; VCE= 4V 1.0 V ICBO Collector Cutoff. |
| Part Number | 2SD1138 Datasheet |
|---|---|
| Description | Silicon NPN Transistor |
| Manufacturer | Renesas |
| Overview |
2SD1138
Silicon NPN Triple Diffused
ADE-208-908 (Z) 1st. Edition
September 2000
Application
Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB861
Outl.
* Collector output capacitance Cob * 20 Note: 1. The 2SD1138 is grouped by hFE1 as follows. 2. Pulse test. Max Unit *V *V 1 µA 320 * 3.0 V 1.0 V * pF Test conditions IC = 50 mA, RBE = ∞ IE = 5 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 4 V, IC = 50 mA VCE = 10 V, IC = 500 mA*2 IC = 500 mA, IB = 50 mA*. |