Hitachi 2SD1136
Silicon NPN Transistor
| Part No. | 2SD1136 |
|---|---|
| Datasheet | 2SD1136 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC IC(peak) IC(surge) PC PC*1 Tj Tstg Ratings 200 80 5 4 5 15 1.8 30 150 –45 to +150 Unit V V V A A A W W °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min Collector to base breakdown V(BR)CBO voltage 200 Collector to emitter breakdown V(BR)CEO voltage 80 Emitter to base breakdown voltage V(BR)EBO 5 Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage ICES hFE VCE(sat) — 20 — Base to emitter saturation voltage VBE(sat) — Fall time Note: 1. Pulse test. tf — Typ — — — — — — — — Max — — — 1.0 — 1.5 1.5 1.0 Unit V Test conditions IC = 1 mA, IE = 0 V IC = 10 mA, RBE = ∞ V IE = 1 mA, IC = 0 mA VCE = 150 V, RBE = 0 VCE = 5 V, IC = 4 A*1 V IC =...
