Hitachi 2SD1521
Silicon NPN Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCEO VEBO IC I C (peak) PC Tj Tstg ID* 1 Rating 50 7 1.5 3.0 10 150 –55 to +150 1.5 Unit V V A A W °C °C A 2SD1521ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage (Zener breakdown voltage) Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test. Symbol V(BR)CBO [V Z] V(BR)EBO I CEO hFE VCE (sat)1 VCE (sat)2 VBE (sat)1 VBE (sat)2 VD Ton Toff Min 50 Typ 60 Max 70 Unit V Test conditions I C = 0.1 mA, IE = 0 7 — 2000 — — — — — — — — — — — — — — — 0.5 2.0 — 10 30000 1.5 2.0 2.0 2.5 3.0 — — V µA I E = 50 mA, IC = 0 VCE...